3D integrated monolayer graphene–Si CMOS RF gas sensor platform
نویسندگان
چکیده
منابع مشابه
Integrated CMOS Surface Acoustic Wave Gas Sensor: Design and Characteristics
The development of inexpensive and miniaturized Surface Acoustics Wave (SAW) gas sensors that are highly selective and sensitive is described. These sensors are implemented with micro-electro-mechanical systems (MEMS) in CMOS technology. IDT equivalent circuit and model for SAW delay line is introduced. Simulation results are included for characterization and design of the sensor. In this paper...
متن کاملMultifunctional Platform with CMOS-Compatible Tungsten Microhotplate for Pirani, Temperature, and Gas Sensor
A multifunctional platform based on the microhotplate was developed for applications including a Pirani vacuum gauge, temperature, and gas sensor. It consisted of a tungsten microhotplate and an on-chip operational amplifier. The platform was fabricated in a standard complementary metal oxide semiconductor (CMOS) process. A tungsten plug in standard CMOS process was specially designed as the se...
متن کاملRF CMOS Integrated Circuit: History, Current Status and Future Prospects
As great advancements have been made in CMOS process technology over the past 20 years, RF CMOS circuits operating in the microwave band have rapidly developed from component circuit levels to multiband/multimode transceiver levels. In the next ten years, it is highly likely that the following devices will be realized: (i) versatile transceivers such as those used in software-defined radios (SD...
متن کاملFully Integrated CMOS Radios from RF to Millimeter Wave Frequencies
This paper reviews (a) recent CMOS demonstrations of capabilities for Radio Frequency (RF), microwave, and millimeter wave circuits from 1 GHz to 100 GHz, (b) advances in on-die isolation structures for integrating radio’s delicate circuits with very noisy general-purpose processors on the same die, and (c) entirely novel design methods for complex RF passive networks on the package substrate b...
متن کامل3D-Solenoid MEMS RF Inductor Design in Standard CMOS Technology
A new 3-D solenoid-inductor structure that is compatible with standard CMOS technology is proposed. Simulation shows excellent area efficiency of more than 80% saving over conventional planar spiral inductor. If combined with post-micromaching, a peak quality factor greater than 10 at 30GHz can be realized.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: npj 2D Materials and Applications
سال: 2017
ISSN: 2397-7132
DOI: 10.1038/s41699-017-0036-0